... began research into semiconductors, and in 1947 Shockley, Brattain and Bardeen created the first "point-contact germanium transistor" (Maxfield & Montrose) followed closely by Shockley's first design on the bipolar junction transistor in 1950. Frosch and Derrick, in 1957, discovered that a thin layer of Silicon Dioxide could insulate against the movement of negative and positive carriers (Mosfet Design Scaling). The first MOSFET was fabricated at AT&T Bell Laboratories by Dawon Kahng and Martin Atalla in 1960, though the device was not patented until 1963 (Mosfet Design Scaling). Comparison: BJT vs. MOSFET The Field Effect Transistor, and in particular the MOSFET, differs from its "competitive active element, the Bipolar Junction Transistor, in three fundamental respects" (Wai-Kai Chen 1509). Bipolar Junction Transistors have 3 input/output terminals: the emitter, the collector, and the base. The term bipolar is used to describe the BJT as both electrons and holes affect the level of conduction through ...

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